电子迁移率 Electron mobility
（重定向自Hole mobility）
电子迁移率（英语：electron mobility）是固体物理学中用于描述金属或半导体内部电子，在电场作用下移动快慢程度的物理量。在半导体中，另一个类似的物理量称为空穴迁移率（hole mobility）。人们常用载流子迁移率（carrier mobility'）来指代半导体内部电子和空穴整体的运动快慢。
Hole mobility
中文百科
英语百科
Electron mobility 电子迁移率
（重定向自Hole mobility）
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field. In semiconductors, there is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility in semiconductors.
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