肖特基势垒
肖特基势垒是指具有整流特性的金属-半导体界面，就如同二极管具有整流特性。肖特基势垒（障壁）相较于PN结最大的区别在于具有较低的接面电压，以及在金属端具有相当薄的(几乎不存在)耗尽层宽度。
并非所有的金属-半导体接面都是具有整流特性的，不具有整流特性的金属-半导体接面则称为欧姆接触。整流属性决定于金属的功函、固有半导体的能隙，以及半导体的掺杂类型及浓度。在设计半导体器件时需要对肖特基效应相当熟悉，以确保不会在需要欧姆接触的地方意外地产生肖特基势垒。
Schottky barrier
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Schottky barrier 肖特基势垒
![Band diagram for n-type semiconductor Schottky barrier at zero bias (equilibrium) with graphical definition of the Schottky barrier height, ΦB, as the difference between the interfacial conduction band edge EC and Fermi level EF. [For a p-type Schottky barrier, ΦB is the difference between EF and the valence band edge EV.]](/uploads/202502/09/Schottky_barrier_zero_bias.svg3650.png)
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB (see figure). The value of ΦB depends on the combination of metal and semiconductor.
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